| PART |
Description |
Maker |
| MB84VD21081-85-PBS MB84VD21081-85-PTS MB84VD21091- |
16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 16M(x8/x16) flash memory & 2M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| K8D1716UBB-YI07 K8D1716UBB-YI08 K8D1716UBB-YI09 K8 |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory 1,600位（200万x8/1M x16）的双银行NOR闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MB84VD2108XEM-70 E550306 MB84VD2109XEM-70PBS MB84V |
16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
From old datasheet system
2-Stacked MCP
|
SPANSION[SPANSION]
Fujitsu
|
| MX28F160C3TXAC-11G MX28F160C3BXAC-11 MX28F160C3BXA |
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 110 ns, PBGA48
|
Macronix International Co., Ltd.
PROM
MACRONIX INTERNATIONAL CO LTD
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| LH28F160BJE-TTL90 |
16M (x8/x16) Flash Memory
|
Sharp Electrionic Components
|
| MB84VA2107-10 MB84VA2106-10 |
16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
|
Fujitsu
|
| K8D1716UTC K8D1716UTC-PC07 K8D1716UBC K8D1716UTC-T |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| K8D1716U K8D1716UT K8D1716UB K8D1716UBB-TC07 K8D17 |
16M Dual Bank NOR Flash Memory
16M BIT (2M X8/1M X16) DUAL BANK NOR FLASH MEMORY
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MX69F1604C3TXBI-90 MX69F1602 MX69F1602C3BXBI-70 MX |
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY
|
MCNIX[Macronix International]
|
| MB84VA2100 MB84VA2101-10 MB84VA2101 MB84VA2100-10 |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
(MB84VA2100 / MB84VA2101) 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| LH28F016SCHB LH28F016SCHB-L95 LHF16C13 LH28F016SCR |
LH28F016SCHSR-L120 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP
LH28F016SCHSR-L150 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP
LH28F016SCN-L100 16M (2M x 8)Smart Voltage Flash Memory
16Mbit Flash Memory
LH28F016SCR-L100 16M (2M x 8)Smart Voltage Flash Memory
LH28F016SCR-L120 16M (2M x 8)Smart Voltage Flash Memory
LH28F016SCR-L95 16M (2M x 8)Smart Voltage Flash Memory
LH28F016SCHSR-L100 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP
|
SHARP[Sharp Electrionic Components]
|
